Qorvo T1G4020036-FL GaN SiC HEMT DC-3.5GHz GaN 2X 120W 36Volt
ManufacturerQorvo(View more products from this manufacturer)
ModelT1G4020036-FL
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Gain: 16 dB
Technology: GaN
Unit Weight: 24.183 g
Output Power: 260 W
Transistor Type: HEMT
Moisture Sensitive: Yes
Transistor Polarity: N-Channel
Maximum Operating Frequency: 3.5 GHz
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