For full functionality of this site it is necessary to enable JavaScript.
EMIN.CO.TH
0
Product image

Qorvo QPD1022TR7 RF Power MOSFET DC-12 GHz, 10W, 32V GaN RF Tr

Contact
Secure Checkout
Quality Engagement
Easy change and return
Delivery Available

Technology: GaN-on-SiC

Mounting Style: SMD/SMT

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 17.5 W

Id - Continuous Drain Current: 610 mA

Maximum Operating Temperature: + 85 C

Minimum Operating Temperature: - 40 C

Vds - Drain-Source Breakdown Voltage: 100 V

Stay Updated with Offers

Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.

By subscribing, you agree to our Terms of Service and Privacy Policy.

Quick Support

Direct access to our certified experts