Qorvo QPD1015L GaN FETs DC-3.7GHz 65W 50V SSG 20dB GaN

Gain: 20 dB

Technology: GaN

Unit Weight: 23 g

Output Power: 70 W

Configuration: Single

Mounting Style: Screw Mount

Development Kit: QPD1015LPCB401

Transistor Type: HEMT

Moisture Sensitive: Yes

Transistor Polarity: N-Channel

Pd - Power Dissipation: 64 W

Maximum Operating Frequency: 3.7 GHz

Minimum Operating Frequency: 0 Hz

Id - Continuous Drain Current: 2.5 A

Maximum Operating Temperature: + 85 C

Minimum Operating Temperature: - 40 C

Vgs - Gate-Source Breakdown Voltage: 145 V

Vds - Drain-Source Breakdown Voltage: 50 V

Vgs th - Gate-Source Threshold Voltage: - 2.8 V