Qorvo QPD1008L GaN FETs DC-3.2GHz 120W 50V SSG 17.5dB GaN

Gain: 17.5 dB

Technology: GaN

Output Power: 162 W

Configuration: Single

Mounting Style: Screw Mount

Development Kit: QPD1008LPCB401

Transistor Type: HEMT

Moisture Sensitive: Yes

Transistor Polarity: N-Channel

Pd - Power Dissipation: 127 W

Maximum Operating Frequency: 3.2 GHz

Minimum Operating Frequency: 0 Hz

Id - Continuous Drain Current: 4 A

Maximum Operating Temperature: + 85 C

Minimum Operating Temperature: - 40 C

Vgs - Gate-Source Breakdown Voltage: 145 V

Vds - Drain-Source Breakdown Voltage: 50 V

Vgs th - Gate-Source Threshold Voltage: - 2.8 V