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Pulse Electronics PE-63387NL Pulse Transformer MOSFET Gate Drive 1:1:1 3750Vrms 0.4Prim. 0.75Sec. 50pF 320V/us Through Hole

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Mounting: Through Hole

Pin Count: 4

Lead Style: PC Pin

Turns Ratio: 1:1:1

Package Type: 4DIP

High Potential: 3750 Vrms

Supplier Package: DIP

Transformer Type: MOSFET Gate Drive Transformer

Product Dimensions: 27.43 x 27.69 x 30.48 mm

Primary ET-Constant: 320 V/us

Operating Temperature: 0 to 70 to 70 °C

Primary Side Inductance: 1500 uH

Maximum DCR Primary Side: 0.4 Ohm

Maximum DCR Secondary Side: 0.75 Ohm

Maximum Interwinding Capacitance: 50 pF

Maximum Primary Leakage Inductance: 4 uH

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