PANJIT PTGH7565S1_T0_00201 IGBT Transistors 650V/75A Insulated Gate Bipolar Transistor
ManufacturerPANJIT(View more products from this manufacturer)
ModelPTGH7565S1_T0_00201
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Technology: Si
Unit Weight: 6.280 g
Configuration: Single
Mounting Style: Through Hole
Pd - Power Dissipation: 366 W
Gate-Emitter Leakage Current: 200 nA
Maximum Gate Emitter Voltage: 20 V
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 40 C
Collector- Emitter Voltage VCEO Max: 650 V
Continuous Collector Current Ic Max: 225 A
Collector-Emitter Saturation Voltage: 1.65 V
Continuous Collector Current at 25 C: 133 A
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