PANJIT PSMP055N08NS1_T0_00601 MOSFETs 80V 5.5mohm Tjmax 175C MV MOSFET

Technology: Si

Unit Weight: 2.095 mg

Channel Mode: Enhancement

Mounting Style: Through Hole

Qg - Gate Charge: 65.8 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 136 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Id - Continuous Drain Current: 111 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 5.5 mOhms

Vds - Drain-Source Breakdown Voltage: 80 V

Vgs th - Gate-Source Threshold Voltage: 3.75 V