PANJIT PJX138K_S1_00001 MOSFETs 50V N-Channel Enhancement Mode MOSFET-ESD Protected

Fall Time: 23 ns

Rise Time: 19.2 ns

Technology: Si

Unit Weight: 6 mg

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 2 N-Channel

Qg - Gate Charge: 630 pC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 223 mW

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 2.2 ns

Typical Turn-Off Delay Time: 6.2 ns

Id - Continuous Drain Current: 350 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 4.5 Ohms

Vds - Drain-Source Breakdown Voltage: 50 V

Vgs th - Gate-Source Threshold Voltage: 1.5 V