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Technology: Si
Unit Weight: 6.231 g
Channel Mode: Enhancement
Configuration: Single
Mounting Style: Through Hole
Qg - Gate Charge: 144 nC
Transistor Polarity: N-Channel
Vgs - Gate-Source Voltage: - 30 V, + 30 V
Id - Continuous Drain Current: 53 A
Rds On - Drain-Source Resistance: 74 mOhms
Vds - Drain-Source Breakdown Voltage: 600 V
Vgs th - Gate-Source Threshold Voltage: 5.5 V
