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Fall Time: 20 ns
Rise Time: 22 ns
Technology: Si
Unit Weight: 8.400 mg
Channel Mode: Enhancement
Configuration: Single
Qualification: AEC-Q101
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel
Qg - Gate Charge: 900 pC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 1.25 W
Vgs - Gate-Source Voltage: - 12 V, + 12 V
Typical Turn-On Delay Time: 2.2 ns
Typical Turn-Off Delay Time: 9 ns
Id - Continuous Drain Current: 1.2 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 50 C
Rds On - Drain-Source Resistance: 900 mOhms
Vds - Drain-Source Breakdown Voltage: 20 V
Vgs th - Gate-Source Threshold Voltage: 1 V
