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R1/R2: 0.047
Mounting Type: Surface Mount
Power-Maximum: 100mW
Transistor type: PNP-Prebias
Collector current: 80mA
DC electricity gain: 80@5mA@10V
Frequency-Transition: 80MHz
Resistance-Base (R1): 2.2kOhms
Vce Saturation (maximum): 250mV@300uA,10mA
Collector-emitter voltage: 50V
Resistance-Emitter base (R2): 47kOhms
DC current gain (hFE) (minimum): 80@5mA,10V
Current-Collector (Ic) (maximum): 80mA
Current-Collector cutoff (maximum): 500nA
Voltage-Collector-emitter breakdown (maximum): 50V
