PANASONIC DRA2522J0L Bipolar Transistor (BJT)
ManufacturerPANASONIC(View more products from this manufacturer)
ModelDRA2522J0L
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Rated power: 200mW
Mounting Type: Surface Mount
Power-Maximum: 200mW
Transistor type: PNP-Prebias
Collector current: 500mA
DC electricity gain: 20@100mA|10V
Resistance-Base (R1): 270Ohm
Vce Saturation (maximum): 250mV@5mA|100mA
Collector-emitter voltage: 50V
Resistance-Emitter base (R2): 5kOhm
DC current gain (hFE) (minimum): 20@100mA,10V
Current-Collector (Ic) (maximum): 500mA
Current-Collector cutoff (maximum): 500nA
Voltage-Collector-emitter breakdown (maximum): 50V
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