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onsemi TIP102G Darlington Transistors 8A 100V Bipolar Power NPN

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Width: 4.83 mm

Height: 15.75 mm

Length: 10.53 mm

Unit Weight: 6 g

REACH - SVHC: Details

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

DC Current Gain hFE Max: 20000

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 100 V

Maximum DC Collector Current: 8 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 200

Maximum Collector Cut-off Current: 50 uA

Collector- Emitter Voltage VCEO Max: 100 V

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