onsemi SMMJT350T3G BJTs - Bipolar Transistors BIP S0T223 PNP 0.5A 300V
Manufactureronsemi(View more products from this manufacturer)
ModelSMMJT350T3G
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Technology: Si
Configuration: Single
Qualification: AEC-Q101
Mounting Style: SMD/SMT
Transistor Polarity: PNP
Pd - Power Dissipation: 2.75 W
DC Current Gain hFE Max: 240
Emitter- Base Voltage VEBO: 5 V
Collector- Base Voltage VCBO: 300 V
Continuous Collector Current: 500 mA
Maximum DC Collector Current: 500 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
DC Collector/Base Gain hfe Min: 30
Collector- Emitter Voltage VCEO Max: 300 V
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