onsemi SMMBT5551LT3G BJTs - Bipolar Transistors High Voltage NPN Bipolar Transistor
Manufactureronsemi(View more products from this manufacturer)
ModelSMMBT5551LT3G
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Technology: Si
Unit Weight: 39 mg
Configuration: Single
Qualification: AEC-Q100
Mounting Style: SMD/SMT
Transistor Polarity: NPN
Pd - Power Dissipation: 300 mW
DC Current Gain hFE Max: 250
Emitter- Base Voltage VEBO: 6 V
Collector- Base Voltage VCBO: 180 V
Continuous Collector Current: 600 V
Maximum DC Collector Current: 600 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
DC Collector/Base Gain hfe Min: 20
Collector- Emitter Voltage VCEO Max: 160 V
Collector-Emitter Saturation Voltage: 250 mV
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