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onsemi SMMBFJ309LT1G JFET N-Channel JFET Transistor

ModelSMMBFJ309LT1G
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Technology: Si

Unit Weight: 40 mg

Configuration: Single

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Polarity: N-Channel

Pd - Power Dissipation: 225 mW

Gate-Source Cutoff Voltage: - 6.5 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Vgs - Gate-Source Breakdown Voltage: - 25 V

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