onsemi SMBT35200MT1G BJTs - Bipolar Transistors High Current PNP Bipolar Transistor for Load Management in Portable Applications
Manufactureronsemi(View more products from this manufacturer)
ModelSMBT35200MT1G
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Technology: Si
Configuration: Single
Qualification: AEC-Q101
Mounting Style: SMD/SMT
Transistor Polarity: PNP
Pd - Power Dissipation: 625 mW
Gain Bandwidth Product fT: 100 MHz
Emitter- Base Voltage VEBO: 5 V
Collector- Base Voltage VCBO: 55 V
Maximum DC Collector Current: 2 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Collector- Emitter Voltage VCEO Max: 35 V
Collector-Emitter Saturation Voltage: 260 mV
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