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onsemi SBF720T1G BJTs - Bipolar Transistors NPN Bipolar Small Signal Transistor

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Technology: Si

Unit Weight: 110 mg

Configuration: Single

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 1.5 W

Gain Bandwidth Product fT: 60 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 300 V

Maximum DC Collector Current: 100 mA

Maximum Operating Temperature: + 150 C

Collector- Emitter Voltage VCEO Max: 300 V

Collector-Emitter Saturation Voltage: 600 mV

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