onsemi SBCP53T1G BJTs - Bipolar Transistors SS GP XSTR PNP 80V

Technology: Si

Unit Weight: 110 mg

Configuration: Single

Qualification: AEC-Q100

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 1.5 W

DC Current Gain hFE Max: 250

Gain Bandwidth Product fT: 50 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 100 V

Maximum DC Collector Current: 1.5 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 40

Collector- Emitter Voltage VCEO Max: 80 V

Collector-Emitter Saturation Voltage: 500 mV