onsemi PZT2222AT3G BJTs - Bipolar Transistors 600mA 75V NPN

Width: 3.5 mm

Height: 1.57 mm

Length: 6.5 mm

Technology: Si

Unit Weight: 190 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 1.5 W

Gain Bandwidth Product fT: 300 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 75 V

Continuous Collector Current: 600 mA

Maximum DC Collector Current: 600 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 35

Collector- Emitter Voltage VCEO Max: 40 V

Collector-Emitter Saturation Voltage: 1 V