onsemi NXH450B100H4Q2F2PG SiC IGBT Modules Si/SiC Hybrid Modules, 3 Channel Symmetric Boost 1000 V, 150 A IGBT, 1200 V, 30 A SiC Diode Press-fit pins
Manufactureronsemi(View more products from this manufacturer)
ModelNXH450B100H4Q2F2PG
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Technology: Si
Configuration: Dual
Pd - Power Dissipation: 234 W
Gate-Emitter Leakage Current: 800 nA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 40 C
Collector- Emitter Voltage VCEO Max: 1 kV
Collector-Emitter Saturation Voltage: 1.7 V
Continuous Collector Current at 25 C: 101 A
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