onsemi NXH300B100H4Q2F2PG SiC IGBT Modules Si/SiC Hybrid Modules, 3 Channel flying capacitor Boost 1000 V, 100 A IGBT, 1200 V, 30 A SiC Diode
Manufactureronsemi(View more products from this manufacturer)
ModelNXH300B100H4Q2F2PG
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Technology: Si
Configuration: Dual Common Source
Pd - Power Dissipation: 194 W
Gate-Emitter Leakage Current: 400 nA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 40 C
Collector- Emitter Voltage VCEO Max: 1 kV
Collector-Emitter Saturation Voltage: 1.8 V
Continuous Collector Current at 25 C: 73 A
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