onsemi NXH011T120M3F2PTHG MOSFET Modules Silicon Carbide (SiC) Module - 11 mohm SiC M3S MOSFET, 1200 V, TNPC Topology in F2 Package Silicon Carbide (SiC) Module ? 11 mohm SiC M3S MOSFET, 1200 V, TNPC Topology in F2 Package

Fall Time: 10.4 ns

Rise Time: 14.5 ns

Technology: SiC

Mounting Style: Press Fit

Vf - Forward Voltage: 5.18 V

Pd - Power Dissipation: 272 W

Vgs - Gate-Source Voltage: - 10 V, + 22 V

Typical Turn-On Delay Time: 40.1 ns

Typical Turn-Off Delay Time: 111.3 ns

Id - Continuous Drain Current: 91 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Rds On - Drain-Source Resistance: 11.9 mOhms

Vds - Drain-Source Breakdown Voltage: 1.2 kV

Vgs th - Gate-Source Threshold Voltage: 1.8 V