onsemi NXH011F120M3F2PTHG Full Bridge Silicon Carbide (SiC) Module - EliteSiC, 11 mohm SiC M3S MOSFET, 1200 V, 4-PACK Full Bridge Topology, F2 Package Silicon Carbide (SiC) Module EliteSiC, 11 mohm SiC M3S MOSFET, 1200 V, 4-PACK Full Bridge Topology, F2 Package

Fall Time: 12.6 ns

Rise Time: 12.7 ns

Technology: SiC

Configuration: Full Bridge

Mounting Style: Press Fit

Transistor Polarity: N-Channel

Vf - Forward Voltage: 5.21 V

Pd - Power Dissipation: 244 W

Vgs - Gate-Source Voltage: - 10 V, + 22 V

Typical Turn-On Delay Time: 30.9 ns

Typical Turn-Off Delay Time: 110.5 ns

Id - Continuous Drain Current: 105 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 40 C

Rds On - Drain-Source Resistance: 16 mOhms

Vds - Drain-Source Breakdown Voltage: 1.2 kV

Vgs th - Gate-Source Threshold Voltage: 2.72 V