onsemi NXH004P120M3F2PTHG Half Bridge Silicon Carbide (SiC) Module - EliteSiC, 4 mohm SiC M3S MOSFET, 1200 V, 2-PACK Half Bridge Topology, F2 Package Silicon Carbide (SiC) Module - EliteSiC, 4 mohm SiC M3S MOSFET, 1200 V, 2-PACK Half Bridge Topology, F2 Package

Fall Time: 14 ns

Rise Time: 15 ns

Technology: SiC

Configuration: Half Bridge

Mounting Style: Press Fit

Vf - Forward Voltage: 5.1 V

Pd - Power Dissipation: 785 W

Vgs - Gate-Source Voltage: - 10 V, + 22 V

Typical Turn-On Delay Time: 49 ns

Typical Turn-Off Delay Time: 127 ns

Id - Continuous Drain Current: 284 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 40 C

Rds On - Drain-Source Resistance: 7.5 mohms

Vds - Drain-Source Breakdown Voltage: 1.2 kV

Vgs th - Gate-Source Threshold Voltage: 2.8 V