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Width: 55.2 mm
Height: 5 mm
Length: 55.2 mm
Fall Time: 51 ns
Rise Time: 59 ns
Technology: SiC
Configuration: Half-Bridge
Mounting Style: Screw Mount
Number of Channels: 2 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 1 kW
Vgs - Gate-Source Voltage: - 10 V, + 25 V
Typical Turn-On Delay Time: 125 ns
Typical Turn-Off Delay Time: 220 ns
Id - Continuous Drain Current: 400 A
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 40 C
Vds - Drain-Source Breakdown Voltage: 1.2 kV
Vgs th - Gate-Source Threshold Voltage: 3.2 V