onsemi NVMTS0D4N04CLTXG MOSFETs Single N-Channel Power MOSFET 40V, 553.8A, 0.4mohm

Fall Time: 107 ns

Rise Time: 147 ns

Technology: Si

Unit Weight: 4.096 g

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 341 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 244 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 110 ns

Typical Turn-Off Delay Time: 217 ns

Id - Continuous Drain Current: 553.8 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 330 S

Rds On - Drain-Source Resistance: 400 uOhms

Vds - Drain-Source Breakdown Voltage: 40 V

Vgs th - Gate-Source Threshold Voltage: 2.5 V