onsemi NVMFS5C410NLAFT1G MOSFETs T6 40V HEFET

Fall Time: 177 ns

Rise Time: 130 ns

Technology: Si

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Qualification: AEC-Q101

Transistor Type: 1 N-Channel

Qg - Gate Charge: 143 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 167 W, 3.8 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 20 ns

Typical Turn-Off Delay Time: 66 ns

Id - Continuous Drain Current: 330 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 190 S

Rds On - Drain-Source Resistance: 650 uOhms

Vds - Drain-Source Breakdown Voltage: 40 V

Vgs th - Gate-Source Threshold Voltage: 1.2 V