onsemi NVH4L060N090SC1 Silicon Carbide MOSFET, EliteSiC, Single, N Channel, 46 A, 900 V, 0.084 ohm, TO-247

Name: onsemi NVH4L060N090SC1 Silicon Carbide MOSFET, EliteSiC, Single, N Channel, 46 A, 900 V, 0.084 ohm, TO-247
Brand: onsemi

ModelNVH4L060N090SC1

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Channel Type: N Channel

Power Dissipation: 221

Transistor Case Style: TO-247

Drain Source Voltage Vds: 900

Operating Temperature Max: 175 °C

Continuous Drain Current Id: 46

Drain Source On State Resistance: 84

Gate Source Threshold Voltage Max: 4.3

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