onsemi NVD6415ANT4G MOSFETs Single N-Channel Power MOSFET 100V, 23A, 55mohm Power MOSFET 100V 23A 55 mOhm Single N-Channel DPAK

Technology: Si

Unit Weight: 330 mg

Channel Mode: Enhancement

Qualification: AEC-Q100

Mounting Style: SMD/SMT

Qg - Gate Charge: 29 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 83 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Id - Continuous Drain Current: 80 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 55 mOhms

Vds - Drain-Source Breakdown Voltage: 100 V

Vgs th - Gate-Source Threshold Voltage: 4 V