onsemi NUS5530MNR2G MOSFET Small Signals INTEGRATED POWER BJT
Manufactureronsemi(View more products from this manufacturer)
ModelNUS5530MNR2G
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Technology: Si
Unit Weight: 161.193 mg
Mounting Style: SMD/SMT
Transistor Polarity: P-Channel
Pd - Power Dissipation: 635 mW
Vgs - Gate-Source Voltage: - 12 V, + 12 V
Id - Continuous Drain Current: 3.9 A
Forward Transconductance - Min: 12 S
Rds On - Drain-Source Resistance: 200 Ohms
Vds - Drain-Source Breakdown Voltage: 20 V
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