onsemi NTMTS0D6N04CLTXG MOSFETs Single N-Channel Power MOSFET 40V, 554.5A, 0.42mohm, PQFN 8x8

Fall Time: 84.7 ns

Rise Time: 111 ns

Technology: Si

Unit Weight: 319.280 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 265 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 245.4 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 89.4 ns

Typical Turn-Off Delay Time: 180 ns

Id - Continuous Drain Current: 554.5 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 323 S

Rds On - Drain-Source Resistance: 420 uOhms

Vds - Drain-Source Breakdown Voltage: 40 V

Vgs th - Gate-Source Threshold Voltage: 1.2 V