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onsemi NTH4L014N120M3P Silicon Carbide (SiC) MOSFET – EliteSiC, 14mohm, 1200V, M3P, TO-247-4L

ModelNTH4L014N120M3P
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No. of Pins: 4

Channel Type: N

Power Dissipation: 686

Drain Source Voltage Vds: 1200

Continuous Drain Current Id: 127

Drain Source On State Resistance: 20@18V

Datasheet


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