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Width: 1.5 mm
Height: 0.94 mm
Length: 3 mm
Fall Time: 1.6 ns, 1.6 ns
Rise Time: 11.2 ns, 11.2 ns
Technology: Si
Unit Weight: 20 mg
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 2 N-Channel
Qg - Gate Charge: 3.8 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 1.1 W
Vgs - Gate-Source Voltage: - 12 V, + 12 V
Typical Turn-On Delay Time: 7.4 ns, 7.4 ns
Typical Turn-Off Delay Time: 12.8 ns, 12.8 ns
Id - Continuous Drain Current: 3.5 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 50 C
Forward Transconductance - Min: 6.2 S, 6.2 S
Rds On - Drain-Source Resistance: 70 mOhms, 70 mOhms
Vds - Drain-Source Breakdown Voltage: 20 V
Vgs th - Gate-Source Threshold Voltage: 500 mV
