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Fall Time: 11 ns
Rise Time: 14 ns
Technology: SiC
Channel Mode: Enhancement
Configuration: Single
Mounting Style: SMD/SMT
Qg - Gate Charge: 74 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 170 W
Vgs - Gate-Source Voltage: - 8 V, + 22.6 V
Typical Turn-On Delay Time: 11 ns
Typical Turn-Off Delay Time: 24 ns
Id - Continuous Drain Current: 46 A
Maximum Operating Temperature: + 170 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 70 mOhms
Vds - Drain-Source Breakdown Voltage: 650 V
Vgs th - Gate-Source Threshold Voltage: 4.3 V
