onsemi NSVS1001CLTWG BJTs - Bipolar Transistors 100V 2.5A PNP LOW SATURATION BJT

Technology: Si

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 2.2 W

DC Current Gain hFE Max: 400

Gain Bandwidth Product fT: 200 MHz

Emitter- Base Voltage VEBO: 7 V

Collector- Base Voltage VCBO: 120 V

Continuous Collector Current: 2.5 A

Maximum DC Collector Current: 4 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 140

Collector- Emitter Voltage VCEO Max: 100 V

Collector-Emitter Saturation Voltage: 300 mV