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onsemi NSVMMBTA05LT1G BJTs - Bipolar Transistors SS SOT23 DR XSTR NPN

ModelNSVMMBTA05LT1G
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Technology: Si

Unit Weight: 8 mg

Configuration: Single

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 225 mW

Gain Bandwidth Product fT: 100 MHz

Emitter- Base Voltage VEBO: 4 V

Collector- Base Voltage VCBO: 60 V

Continuous Collector Current: 500 mA

Maximum DC Collector Current: 500 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 60 V

Collector-Emitter Saturation Voltage: 250 mV

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