onsemi NSVMMBT6520LT1G BJTs - Bipolar Transistors High Voltage PNP Bipolar Transistor
Manufactureronsemi(View more products from this manufacturer)
ModelNSVMMBT6520LT1G
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Technology: Si
Unit Weight: 12 mg
Configuration: Single
Qualification: AEC-Q101
Mounting Style: SMD/SMT
Transistor Polarity: PNP
Pd - Power Dissipation: 225 mW
DC Current Gain hFE Max: 200
Gain Bandwidth Product fT: 40 MHz
Emitter- Base Voltage VEBO: 5 V
Collector- Base Voltage VCBO: 350 V
Maximum DC Collector Current: 500 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
DC Collector/Base Gain hfe Min: 30
Collector- Emitter Voltage VCEO Max: 350 V
Collector-Emitter Saturation Voltage: 500 mV
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