onsemi NSVMMBT5087LT1G BJTs - Bipolar Transistors SS SOT23 LN XSTR PNP 50V

Technology: Si

Unit Weight: 8 mg

Configuration: Single

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 225 mW

DC Current Gain hFE Max: 800 at - 100 uA, - 5 VDC

Gain Bandwidth Product fT: 40 MHz

Emitter- Base Voltage VEBO: 3 V

Collector- Base Voltage VCBO: 50 V

Maximum DC Collector Current: 50 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 250 at - 100 uA, - 5 VDC

Collector- Emitter Voltage VCEO Max: 50 V

Collector-Emitter Saturation Voltage: 300 mV