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onsemi NSVJ3557SA3T1G JFET NCH J-FET

ModelNSVJ3557SA3T1G
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Technology: Si

Unit Weight: 11.600 mg

Configuration: Single

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Polarity: N-Channel

Pd - Power Dissipation: 200 mW

Gate-Source Cutoff Voltage: - 700 mV

Maximum Drain Gate Voltage: - 15 V

Drain-Source Current at Vgs=0: 32 mA

Id - Continuous Drain Current: 50 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 24 mS

Vgs - Gate-Source Breakdown Voltage: - 15 V

Vds - Drain-Source Breakdown Voltage: 15 V

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