onsemi NSVF6003SB6T1G RF Bipolar Transistors BIP NPN 0.15A 12V FT=7G
Manufactureronsemi(View more products from this manufacturer)
ModelNSVF6003SB6T1G
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Technology: Si
Unit Weight: 15 mg
Configuration: Single
Qualification: AEC-Q101
Mounting Style: SMD/SMT
Transistor Type: Bipolar
Operating Frequency: 7 GHz
Transistor Polarity: NPN
Pd - Power Dissipation: 800 mW
Emitter- Base Voltage VEBO: 2 V
Continuous Collector Current: 150 mA
Maximum DC Collector Current: 150 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
DC Collector/Base Gain hfe Min: 100
Collector- Emitter Voltage VCEO Max: 12 V
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