onsemi NSVBC817-16LT1G BJTs - Bipolar Transistors SS SOT23 GP XSTR NPN 45V
Manufactureronsemi(View more products from this manufacturer)
ModelNSVBC817-16LT1G
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Technology: Si
Unit Weight: 39 mg
Configuration: Single
Qualification: AEC-Q101
Mounting Style: SMD/SMT
Transistor Polarity: NPN
Pd - Power Dissipation: 225 mW
DC Current Gain hFE Max: 250
Gain Bandwidth Product fT: 100 MHz
Emitter- Base Voltage VEBO: 5 V
Collector- Base Voltage VCBO: 50 V
Maximum DC Collector Current: 500 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 65 C
Collector- Emitter Voltage VCEO Max: 45 V
Collector-Emitter Saturation Voltage: 700 mV
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