onsemi NSV60101DMR6T1G BJTs - Bipolar Transistors 60V, 1A DUAL NPN LOW VCE(
Manufactureronsemi(View more products from this manufacturer)
ModelNSV60101DMR6T1G
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Technology: Si
Configuration: Dual
Qualification: AEC-Q101
Mounting Style: SMD/SMT
Transistor Polarity: NPN
Pd - Power Dissipation: 530 mW
DC Current Gain hFE Max: 295
Gain Bandwidth Product fT: 200 MHz
Emitter- Base Voltage VEBO: 6 V
Collector- Base Voltage VCBO: 60 V
Maximum DC Collector Current: 1 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
DC Collector/Base Gain hfe Min: 100
Collector- Emitter Voltage VCEO Max: 60 V
Collector-Emitter Saturation Voltage: 143 mV
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