onsemi NSV2SC5658M3T5G BJTs - Bipolar Transistors GENERAL PURPOSE
Manufactureronsemi(View more products from this manufacturer)
ModelNSV2SC5658M3T5G
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Technology: Si
Unit Weight: 1.275 mg
Configuration: Single
Qualification: AEC-Q101
Mounting Style: SMD/SMT
Transistor Polarity: NPN
Pd - Power Dissipation: 260 mW
DC Current Gain hFE Max: 560 at 1 mA, 6 VDC
Gain Bandwidth Product fT: 180 MHz
Emitter- Base Voltage VEBO: 7 V
Collector- Base Voltage VCBO: 5 V
Maximum DC Collector Current: 150 mA
Maximum Operating Temperature: + 150 C
DC Collector/Base Gain hfe Min: 120
Collector- Emitter Voltage VCEO Max: 50 V
Collector-Emitter Saturation Voltage: 400 mV
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