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onsemi NSV2SA2029M3T5G BJTs - Bipolar Transistors SS TRANSISTOR PNP SOT723

ModelNSV2SA2029M3T5G
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Technology: Si

Unit Weight: 1.275 mg

Configuration: Single

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 265 mW

DC Current Gain hFE Max: 560

Gain Bandwidth Product fT: 140 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 50 V

Maximum DC Collector Current: 100 mA

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 120

Collector- Emitter Voltage VCEO Max: 50 V

Collector-Emitter Saturation Voltage: 500 mV

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