onsemi NSTB1005DXV5T1G BJTs - Bipolar Transistors 100mA Complementary 50V Dual NPN & PNP
Manufactureronsemi(View more products from this manufacturer)
ModelNSTB1005DXV5T1G
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Width: 1.3 mm
Height: 0.6 mm
Length: 1.7 mm
Technology: Si
Unit Weight: 2.800 mg
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Polarity: PNP
Pd - Power Dissipation: 357 mW
DC Current Gain hFE Max: 80 at 5 mA, 10 V at NPN
Collector- Base Voltage VCBO: 50 V
Continuous Collector Current: 100 mA
DC Collector/Base Gain hfe Min: 80
Collector- Emitter Voltage VCEO Max: 50 V
Collector-Emitter Saturation Voltage: 250 mV
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