onsemi NST4617MX2T5G BJTs - Bipolar Transistors SS SOT883 GP XSTR 120V

Technology: Si

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 166 mW

DC Current Gain hFE Max: 560

Gain Bandwidth Product fT: 112 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 50 V

Continuous Collector Current: 100 mA

Maximum DC Collector Current: 100 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 120

Collector- Emitter Voltage VCEO Max: 50 V

Collector-Emitter Saturation Voltage: 80 mV