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onsemi NSS60201SMTTBG BJTs - Bipolar Transistors 60V SINGLE 2A LOWVC E(SAT)

ModelNSS60201SMTTBG
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Technology: Si

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 1.8 W

Gain Bandwidth Product fT: 180 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 60 V

Continuous Collector Current: 2 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 250

Collector- Emitter Voltage VCEO Max: 60 V

Collector-Emitter Saturation Voltage: 115 mV

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