onsemi NSS40302PDR2G BJTs - Bipolar Transistors COMP NPN/PNP LO VCE 40V 6A

Width: 4 mm

Height: 1.5 mm

Length: 5 mm

Technology: Si

Unit Weight: 143 mg

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Polarity: NPN, PNP

Pd - Power Dissipation: 783 mW

DC Current Gain hFE Max: 200 at 10 mA, 2 V

Gain Bandwidth Product fT: 100 MHz

Emitter- Base Voltage VEBO: 6 V, 7 V

Collector- Base Voltage VCBO: 40 V

Maximum DC Collector Current: 3 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 200 at 10 mA, 2 V, 200 at 500 mA, 2 V, 180 at 1 A, 2 V, 180 at 2 A, 2 V

Collector- Emitter Voltage VCEO Max: 40 V

Collector-Emitter Saturation Voltage: 82 mV, 135 mV