onsemi NSS30201MR6T1G BJTs - Bipolar Transistors 2A 30V Low VCEsat

Width: 1.5 mm

Height: 0.94 mm

Length: 3 mm

Technology: Si

Unit Weight: 20 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 535 mW

Gain Bandwidth Product fT: 300 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 50 V

Continuous Collector Current: 2 A

Maximum DC Collector Current: 2 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 300

Collector- Emitter Voltage VCEO Max: 30 V

Collector-Emitter Saturation Voltage: 60 mV